+420 517070880

Part of the TTI Family of Specialists Contact Mouser (Czech Republic) +420 517070880 Feedback

Change Location

English

In Stock

RoHS

Mfr.	Mfr. No:	Qty	Ext Total

View Basket

It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

STGWA80H65DFBAG

Name: STMicroelectronics STGWA80H65DFBAG
Brand: STMicroelectronics
SKU: 511-STGWA80H65DFBAG
Price: 5.68 EUR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

511-STGWA80H65DFBAG

Mfr. No:

STGWA80H65DFBAG

Mfr.:

STMicroelectronics

Description:

IGBTs Automotive-grade trench gate field-stop 650 V, 80 A high speed HB series IGBT

Complete Your Design

Datasheet:

STGWA80H65DFBAG Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about STMicroelectronics STGWA80H65DFBAG

In Stock: 293

Stock:: 293 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 14 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	5,68 €	5,68 €
	3,25 €	32,50 €
	2,70 €	324,00 €
	2,38 €	1.213,80 €

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	IGBTs
RoHS:
Technology:	Si
Package/Case:	TO-247-3
Mounting Style:	Through Hole
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.65 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	120 A
Pd - Power Dissipation:	535 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Qualification:	AEC-Q100
Packaging:	Tube
Brand:	STMicroelectronics
Product Type:	IGBT Transistors
Factory Pack Quantity:	30
Subcategory:	IGBTs
Unit Weight:	6,100 g

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

STGWA80H65DFBAG Datasheet (PDF)

PCN

SPICE Models

SPICE Model (Zip)

This functionality requires JavaScript to be enabled.

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
MXHTS:: 8541299900
ECCN:: EAR99

HB/HB2 Series Insulated-Gate Bipolar Transistors

STMicroelectronics HB/HB2 Series Insulated-Gate Bipolar Transistors (IGBTs) combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary Trench Gate Field-Stop (TGFS) structure.