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STGWA50M65DF2AG

Name: STMicroelectronics STGWA50M65DF2AG
Brand: STMicroelectronics
SKU: 511-STGWA50M65DF2AG
Price: 5.04 EUR
Availability: InStock

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Mouser No:

511-STGWA50M65DF2AG

Mfr. No:

STGWA50M65DF2AG

Mfr.:

STMicroelectronics

Description:

IGBTs Automotive-grade trench gate field-stop 650 V, 50 A low-loss M series IGBT

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Datasheet:

STGWA50M65DF2AG Datasheet (PDF)

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In Stock: 34

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Factory Lead Time:: 14 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	5,04 €	5,04 €
	3,51 €	35,10 €
	2,54 €	254,00 €
	2,35 €	1.410,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	IGBTs
RoHS:
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Series:	HB2
Qualification:	AEC-Q100
Packaging:	Tube
Brand:	STMicroelectronics
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Product Type:	IGBT Transistors
Factory Pack Quantity:	600
Subcategory:	IGBTs
Unit Weight:	6,100 g

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Datasheet

STGWA50M65DF2AG Datasheet (PDF)

PCN

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

650V IH Series IGBTs

STMicroelectronics 650V IH Series IGBTs offer high efficiency for induction heating systems and soft switching applications. The STMicroelectronics IGBTs belong to the STPOWER™ family that exceeds the HB series, currently used for induction heating applications. The 650V IH series ensures increased efficiency in final applications thanks to a lower V_CE(sat) combined with very low turn-off energy. 40A and 50A devices are already available in TO-247 Long Leads packages, and 20A and 30A devices are being developed.

STM 650V M Series Trench Gate Field-Stop IGBTs

STMicroelectronics 650V M Series Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. STMicroelectronics 650V M series supply a 3A-150A maximum collector current for applications with up to 100kHz operating frequency. The IGBTs have an optimized design and are available in a tailored built-in anti-parallel diode. A positive V_CE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.