STGWA20M65DF2

STMicroelectronics
511-STGWA20M65DF2
STGWA20M65DF2

Mfr.:

Description:
IGBTs Trench gate field-stop, 650 V, 20 A low-loss M series IGBT in a TO-247 long lead

Lifecycle:
NRND:
Not recommended for new designs.
ECAD Model:
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Availability

Stock:
Non-Stocked
Factory Lead Time:
14 Weeks Estimated factory production time.
Minimum: 600   Multiples: 600
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
1,16 € 696,00 €
1,15 € 3.450,00 €
1,14 € 6.156,00 €

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: IGBTs
RoHS:  
Si
TO-247-3
Through Hole
Single
650 V
1.55 V
- 20 V, 20 V
40 A
166 W
- 55 C
+ 175 C
HB2
Tube
Brand: STMicroelectronics
Continuous Collector Current Ic Max: 40 A
Gate-Emitter Leakage Current: 250 uA
Product Type: IGBT Transistors
Factory Pack Quantity: 600
Subcategory: IGBTs
Unit Weight: 6 g
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Attributes selected: 0

TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
MXHTS:
85412999
ECCN:
EAR99

650V IH Series IGBTs

STMicroelectronics 650V IH Series IGBTs offer high efficiency for induction heating systems and soft switching applications. The STMicroelectronics IGBTs belong to the STPOWER™ family that exceeds the HB series, currently used for induction heating applications. The 650V IH series ensures increased efficiency in final applications thanks to a lower VCE(sat)  combined with very low turn-off energy. 40A and 50A devices are already available in TO-247 Long Leads packages, and 20A and 30A devices are being developed.