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STGW100H65FB2-4

Name: STMicroelectronics STGW100H65FB2-4
Brand: STMicroelectronics
SKU: 511-STGW100H65FB2-4
Price: 8.19 EUR
Availability: InStock

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Mouser No:

511-STGW100H65FB2-4

Mfr. No:

STGW100H65FB2-4

Mfr.:

STMicroelectronics

Description:

IGBTs Trench gate field-stop, 650 V, 100 A, high-speed HB2 series IGBT in a TO247-4 pa

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Datasheet:

STGW100H65FB2-4 Datasheet (PDF)

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In Stock: 42

Stock:: 42 Can Dispatch Immediately

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Factory Lead Time:: 15 Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 42 will be subject to minimum order requirements.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	8,19 €	8,19 €
	5,19 €	51,90 €
	4,39 €	439,00 €
	3,82 €	2.292,00 €
	3,73 €	4.476,00 €
	3,72 €	11.160,00 €
25.200	Quote

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	IGBTs
RoHS:
Technology:	Si
Package/Case:	TO-247-4
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.55 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	145 A
Pd - Power Dissipation:	441 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Series:	HB2
Packaging:	Tube
Brand:	STMicroelectronics
Product Type:	IGBT Transistors
Factory Pack Quantity:	600
Subcategory:	IGBTs
Unit Weight:	4,430 g

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Datasheet

STGW100H65FB2-4 Datasheet (PDF)

Compliance Codes

TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

650V IH Series IGBTs

STMicroelectronics 650V IH Series IGBTs offer high efficiency for induction heating systems and soft switching applications. The STMicroelectronics IGBTs belong to the STPOWER™ family that exceeds the HB series, currently used for induction heating applications. The 650V IH series ensures increased efficiency in final applications thanks to a lower V_CE(sat) combined with very low turn-off energy. 40A and 50A devices are already available in TO-247 Long Leads packages, and 20A and 30A devices are being developed.

HB/HB2 Series Insulated-Gate Bipolar Transistors

STMicroelectronics HB/HB2 Series Insulated-Gate Bipolar Transistors (IGBTs) combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary Trench Gate Field-Stop (TGFS) structure.