STGP4M65DF2

STMicroelectronics
511-STGP4M65DF2
STGP4M65DF2

Mfr.:

Description:
IGBTs Trench Gate IGBT M Series 650V 4A
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Datasheet:
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Availability

Stock:
0

You can still purchase this product for backorder.

On Order:
1.913
Expected 10/5/2026
Factory Lead Time:
15
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
1,30 € 1,30 €
0,613 € 6,13 €
0,546 € 54,60 €
0,428 € 214,00 €
0,39 € 390,00 €
0,35 € 700,00 €

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: IGBTs
RoHS:  
Si
TO-220-3
Through Hole
Single
650 V
1.6 V
- 20 V, 20 V
8 A
68 W
- 55 C
+ 175 C
STGP4M65DF2
Tube
Brand: STMicroelectronics
Continuous Collector Current Ic Max: 8 A
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: CN
Gate-Emitter Leakage Current: 250 uA
Product Type: IGBT Transistors
Factory Pack Quantity: 1000
Subcategory: IGBTs
Unit Weight: 1,800 g
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Attributes selected: 0

TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
MXHTS:
8541299900
ECCN:
EAR99

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