STGP20M65DF2

STMicroelectronics
511-STGP20M65DF2
STGP20M65DF2

Mfr.:

Description:
IGBTs Trench gate field-stop IGBT M series, 650 V 20 A low loss
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Datasheet:
ECAD Model:
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Availability

Stock:
0

You can still purchase this product for backorder.

Factory Lead Time:
15 Weeks Estimated factory production time.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
2,29 € 2,29 €
1,20 € 12,00 €
1,08 € 108,00 €
0,886 € 443,00 €
0,848 € 848,00 €

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: IGBTs
RoHS:  
Si
TO-220-3
Through Hole
Single
650 V
1.55 V
- 20 V, 20 V
40 A
166 W
- 55 C
+ 175 C
STGP20M65DF2
Tube
Brand: STMicroelectronics
Continuous Collector Current Ic Max: 40 A
Gate-Emitter Leakage Current: 250 uA
Product Type: IGBT Transistors
Factory Pack Quantity: 1000
Subcategory: IGBTs
Unit Weight: 1,800 g
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Attributes selected: 0

Compliance Codes
TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
MXHTS:
85412999
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

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