STGB6M65DF2

STMicroelectronics
511-STGB6M65DF2
STGB6M65DF2

Mfr.:

Description:
IGBTs Trench gate field-stop IGBT M series, 650 V 6 A low loss
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Datasheet:
ECAD Model:
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Availability

Stock:
Non-Stocked
Factory Lead Time:
15 Weeks Estimated factory production time.
Minimum: 2000   Multiples: 1000
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
Full Reel (Order in multiples of 1000)
0,441 € 882,00 €

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: IGBTs
RoHS:  
Si
D2PAK-3
SMD/SMT
Single
650 V
1.55 V
- 20 V, 20 V
12 A
88 W
- 55 C
+ 175 C
STGB6M65DF2
Reel
Brand: STMicroelectronics
Continuous Collector Current Ic Max: 12 A
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: CN
Gate-Emitter Leakage Current: +/- 250 uA
Product Type: IGBT Transistors
Factory Pack Quantity: 1000
Subcategory: IGBTs
Unit Weight: 1,380 g
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Attributes selected: 0

TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
MXHTS:
85412999
ECCN:
EAR99

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