STGB4M65DF2

STMicroelectronics
511-STGB4M65DF2
STGB4M65DF2

Mfr.:

Description:
IGBTs Trench gate field-stop IGBT, M series 650 V, 4 A low loss

ECAD Model:
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Availability

Stock:
Non-Stocked
Factory Lead Time:
15 Weeks Estimated factory production time.
Minimum: 2000   Multiples: 1000
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
Full Reel (Order in multiples of 1000)
0,357 € 714,00 €

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: IGBTs
RoHS:  
Si
D2PAK-3
SMD/SMT
Single
650 V
1.6 V
- 20 V, 20 V
8 A
68 W
- 55 C
+ 175 C
STGB4M65DF2
Reel
Brand: STMicroelectronics
Continuous Collector Current Ic Max: 8 A
Gate-Emitter Leakage Current: +/- 250 uA
Product Type: IGBT Transistors
Factory Pack Quantity: 1000
Subcategory: IGBTs
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Attributes selected: 0

TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541299000
MXHTS:
8541299900
ECCN:
EAR99

STM 650V M Series Trench Gate Field-Stop IGBTs

STMicroelectronics 650V M Series Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. STMicroelectronics 650V M series supply a 3A-150A maximum collector current for applications with up to 100kHz operating frequency. The IGBTs have an optimized design and are available in a tailored built-in anti-parallel diode. A positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.