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STFW4N150

Name: STMicroelectronics STFW4N150
Brand: STMicroelectronics
SKU: 511-STFW4N150
Price: 5.64 EUR
Availability: InStock

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Mouser No:

511-STFW4N150

Mfr. No:

STFW4N150

Mfr.:

STMicroelectronics

Description:

MOSFETs N-channel 1500 V 4 A PowerMESH

Complete Your Design

Datasheet:

STFW4N150 Datasheet (PDF)

ECAD Model:

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Learn more about STMicroelectronics STFW4N150

In Stock: 232

Stock:: 232

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On Order:: 600

Expected 7/27/2026
Factory Lead Time:: 14

Weeks Estimated factory production time for quantities greater than shown.

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Ext. Price:

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	5,64 €	5,64 €
	3,33 €	33,30 €
	2,78 €	278,00 €
	2,69 €	1.614,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-3PF-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.5 kV
Id - Continuous Drain Current:	4 A
Rds On - Drain-Source Resistance:	7 Ohms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	50 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	63 W
Channel Mode:	Enhancement
Tradename:	PowerMESH
Packaging:	Tube
Brand:	STMicroelectronics
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	KR
Product Type:	MOSFETs
Series:	STFW4N150
Factory Pack Quantity:	300
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Unit Weight:	7 g

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Datasheet

STFW4N150 Datasheet (PDF)

PCN

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

N-Channel PowerMESH Power MOSFETs

STMicroelectronics N-Channel PowerMESH Power MOSFETs are designed with the STMicroelectronics consolidated strip-layout based MESH OVERLAY™ process. This process results in an advanced family of high voltage Power MOSFETs with outstanding performances. The strengthened layout coupled with the proprietary edge termination structure, gives the lowest R_DS(on) per area, unrivaled gate charge, and switching characteristics.