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STFW3N150

Name: STMicroelectronics STFW3N150
Brand: STMicroelectronics
SKU: 511-STFW3N150
Price: 3.88 EUR
Availability: InStock

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Mouser No:

511-STFW3N150

Mfr. No:

STFW3N150

Mfr.:

STMicroelectronics

Description:

MOSFETs N-channel 1500 V 2.5 A PowerMESH

Complete Your Design

Datasheet:

STFW3N150 Datasheet (PDF)

ECAD Model:

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Learn more about STMicroelectronics STFW3N150

In Stock: 1.640

Stock:: 1.640

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On Order:: 900

Expected 3/18/2026
Factory Lead Time:: 14

Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

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Ext. Price:

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	3,88 €	3,88 €
	2,53 €	25,30 €
	1,77 €	177,00 €
	1,60 €	960,00 €
	1,53 €	1.836,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-3PF-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.5 kV
Id - Continuous Drain Current:	2.5 A
Rds On - Drain-Source Resistance:	9 Ohms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	29.3 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	63 W
Channel Mode:	Enhancement
Tradename:	PowerMESH
Packaging:	Tube
Brand:	STMicroelectronics
Configuration:	Single
Fall Time:	61 ns
Forward Transconductance - Min:	2.6 S
Product Type:	MOSFETs
Rise Time:	47 ns
Series:	STFW3N150
Factory Pack Quantity:	300
Subcategory:	Transistors
Transistor Type:	1 N-Channel Power MOSFET
Typical Turn-Off Delay Time:	45 ns
Typical Turn-On Delay Time:	24 ns
Unit Weight:	7 g

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Datasheet

STFW3N150 Datasheet (PDF)

PCN

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

N-Channel PowerMESH Power MOSFETs

STMicroelectronics N-Channel PowerMESH Power MOSFETs are designed with the STMicroelectronics consolidated strip-layout based MESH OVERLAY™ process. This process results in an advanced family of high voltage Power MOSFETs with outstanding performances. The strengthened layout coupled with the proprietary edge termination structure, gives the lowest R_DS(on) per area, unrivaled gate charge, and switching characteristics.