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STF11N60DM2

Name: STMicroelectronics STF11N60DM2
Brand: STMicroelectronics
SKU: 511-STF11N60DM2
Price: 2.02 EUR
Availability: InStock

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Mouser No:

511-STF11N60DM2

Mfr. No:

STF11N60DM2

Mfr.:

STMicroelectronics

Description:

MOSFETs N-channel 600 V, 370 mOhm typ., 10 A MDmesh DM2 Power MOSFET in a TO-220FP packa

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Datasheet:

STF11N60DM2 Datasheet (PDF)

ECAD Model:

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Learn more about STMicroelectronics STF11N60DM2

In Stock: 303

Stock:: 303

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On Order:: 2.000

Expected 3/23/2026
Factory Lead Time:: 16

Weeks Estimated factory production time for quantities greater than shown.

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Ext. Price:

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	2,02 €	2,02 €
	0,989 €	9,89 €
	0,886 €	88,60 €
	0,707 €	353,50 €
	0,649 €	649,00 €
	0,643 €	1.286,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	10 A
Rds On - Drain-Source Resistance:	370 mOhms
Vgs - Gate-Source Voltage:	- 25 V, 25 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	16.5 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	25 W
Channel Mode:	Enhancement
Tradename:	MDmesh
Packaging:	Tube
Brand:	STMicroelectronics
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	9.5 ns
Product Type:	MOSFETs
Rise Time:	6.3 ns
Series:	STF11N60DM2
Factory Pack Quantity:	1000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	31 ns
Typical Turn-On Delay Time:	11.7 ns
Unit Weight:	2 g

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Datasheet

STF11N60DM2 Datasheet (PDF)

PCN

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

MDmesh™ DM2 Power MOSFETs

STMicroelectronics MDmesh™ DM2 Power MOSFETs are silicon-based MOSFETs with a fast recovery intrinsic diode optimized for ZVS phase-shift bridge topologies. STMicroelectronics MDmesh DM2 MOSFETS feature a very low recovery charge and time (Q_rr, t_rr) and shows 20% lower R_DS(on) compared to the previous generation. High dV/dt ruggedness (40V/ns) ensures improved system reliability.