STD80N4F6

STMicroelectronics
511-STD80N4F6
STD80N4F6

Mfr.:

Description:
MOSFETs N-Ch 40V 80A STripFET VI DeepGate
Complete Your Design

Datasheet:
ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.
More Information
Learn more about STMicroelectronics STD80N4F6

In Stock: 3.003

Stock:
3.003 Can Dispatch Immediately
Factory Lead Time:
13 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 2500)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
0,851 € 0,85 €
0,82 € 8,20 €
0,743 € 74,30 €
0,667 € 333,50 €
0,645 € 645,00 €
Full Reel (Order in multiples of 2500)
0,564 € 1.410,00 €
0,558 € 2.790,00 €
† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
DPAK-3 (TO-252-3)
N-Channel
1 Channel
40 V
80 A
6 mOhms
- 20 V, 20 V
4 V
36 nC
- 55 C
+ 175 C
70 W
Enhancement
AEC-Q100
STripFET
Reel
Cut Tape
MouseReel
Brand: STMicroelectronics
Configuration: Single
Fall Time: 11.9 ns
Product Type: MOSFETs
Rise Time: 7.6 ns
Series: STD80N4F6
Factory Pack Quantity: 2500
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 46.1 ns
Typical Turn-On Delay Time: 10.5 ns
Unit Weight: 330 mg
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
MXHTS:
85412999
ECCN:
EAR99

STripFET VI™ Power MOSFETs

STMicroelectronics STripFET VI™ Power MOSFETs are enhancement-mode MOSFETs that benefit from STMicroelectronics proprietary STripFET technology with an updated gate structure. The resulting STripFET Power MOSFET uses a trench technology for high efficiency and low RDS(on) required by various automotive and industrial switching applications such as motor control, UPS, DC/DC converters, induction heater vaporizers, and solar. These STMicroelectronics MOSFETs have a very low switching gate charge, high avalanche ruggedness, low gate drive power losses, and high power density.

STripFET Power MOSFETs

STMIcroelectronics STripFET™ Power MOSFETs are enhancement-mode MOSFETs that benefit from the latest refinement of the STMicroelectronics proprietary STripFET technology with a new gate structure. The resulting STripFET Power MOSFET exhibits the high current and low RDS(on) required by automotive and industrial switching applications such as motor control, uninterruptible power supplies (UPS), DC/DC converters, induction heater vaporizers, and solar. STMicroelectronics STripFET Power MOSFETs have a very low switching gate charge, high avalanche ruggedness, low gate drive power losses, and high power density.

AEC-Q101 Qualified STripFET Power MOSFETs

STMicroelectronics AEC-Q101 Qualified STripFET Power MOSFETs utilize ST's proprietary trench-based low voltage technology, achieving extremely low conduction losses. These STMicroelectronics power MOSFETs minimize the energy normally lost in electrical drives, leading to greater efficiency and making them suitable for many applications. Housed in industry-standard TO-252 and TO-263 SMD packages with RDS(on) ranging from 3mΩ to 12.5mΩ, these devices perform well in most low-voltage automotive applications. This product range includes both standard and logic-level thresholds.

An unexpected error has occurred.


Have a question? Please visit the Help Centre.
For questions about a specific order, please log in to your account.

If you encounter further problems, please contact us on 800-346-6873 or email help@mouser.com.