It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

STD1NK60-1

Name: STMicroelectronics STD1NK60-1
Brand: STMicroelectronics
SKU: 511-STD1NK60-1
Price: 1.39 EUR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

511-STD1NK60-1

Mfr. No:

STD1NK60-1

Mfr.:

STMicroelectronics

Datasheet:

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Stock:: 4.053 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 13 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Series:	STQ1HNK60R
Mounting Style:	Through Hole
Package/Case:	TO-251-3
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Packaging:	Tube
Brand:	STMicroelectronics
Channel Mode:	Enhancement
Configuration:	Single
Fall Time:	25 ns
Forward Transconductance - Min:	1 S
Id - Continuous Drain Current:	1 A
Number of Channels:	1 Channel
Pd - Power Dissipation:	3 W
Product Type:	MOSFETs
Qg - Gate Charge:	7 nC
Rds On - Drain-Source Resistance:	8 Ohms
Rise Time:	5 ns
Factory Pack Quantity:	3000
Subcategory:	Transistors
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	19 ns
Typical Turn-On Delay Time:	6.5 ns
Vds - Drain-Source Breakdown Voltage:	600 V
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	2.25 V
Unit Weight:	340 mg