STD11N50M2

STMicroelectronics
511-STD11N50M2
STD11N50M2

Mfr.:

Description:
MOSFETs N-channel 500 V, 0.45 Ohm typ., 8 A MDmesh M2 Power MOSFET in DPAK package
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Datasheet:
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In Stock: 2.569

Stock:
2.569 Can Dispatch Immediately
Factory Lead Time:
18 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 2500)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
1,38 € 1,38 €
0,877 € 8,77 €
0,582 € 58,20 €
0,457 € 228,50 €
0,416 € 416,00 €
Full Reel (Order in multiples of 2500)
0,415 € 1.037,50 €
0,348 € 1.740,00 €
† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
DPAK-3 (TO-252-3)
N-Channel
1 Channel
500 V
8 A
450 mOhms
- 25 V, 25 V
2 V
12 nC
- 55 C
+ 150 C
85 W
Enhancement
MDmesh
Reel
Cut Tape
MouseReel
Brand: STMicroelectronics
Configuration: Single
Fall Time: 28.5 ns
Product Type: MOSFETs
Rise Time: 9 ns
Series: STD11N50M2
Factory Pack Quantity: 2500
Subcategory: Transistors
Typical Turn-Off Delay Time: 8 ns
Typical Turn-On Delay Time: 11 ns
Unit Weight: 330 mg
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Attributes selected: 0

Datasheet

PCN

Compliance Codes
TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
MXHTS:
85412999
ECCN:
EAR99
Origin Classifications
Country of Origin:
Singapore
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low RDS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.

MDmesh™ II Power MOSFETs

STMicroelectronics 600 and 650V MDmesh™ M2 series of super-junction Power MOSFETs are optimized for soft-switching applications (LLC resonant power supplies) thanks to the optimized trade-off between RDS(on), gate charge (Qg) and intrinsic capacitances (Ciss, Coss). They also are suitable for PFC applications, especially at light loads.

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