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STB18NM80

Name: STMicroelectronics STB18NM80
Brand: STMicroelectronics
SKU: 511-STB18NM80
Price: 4.38 EUR
Availability: InStock

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Mouser No:

511-STB18NM80

Mfr. No:

STB18NM80

Mfr.:

STMicroelectronics

Description:

MOSFETs N-channel 800 V MDMesh

Complete Your Design

Datasheet:

STB18NM80 Datasheet (PDF)

ECAD Model:

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In Stock: 596

Stock:: 596 Can Dispatch Immediately

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Factory Lead Time:: 14 Weeks Estimated factory production time for quantities greater than shown.

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Unit Price:

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Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 1000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	4,38 €	4,38 €
	3,21 €	32,10 €
	2,59 €	259,00 €
	2,30 €	1.150,00 €
Full Reel (Order in multiples of 1000)
	1,97 €	1.970,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	D2PAK-3 (TO-263-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	800 V
Id - Continuous Drain Current:	17 A
Rds On - Drain-Source Resistance:	295 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	5 V
Qg - Gate Charge:	70 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	190 W
Channel Mode:	Enhancement
Tradename:	MDmesh
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	STMicroelectronics
Product Type:	MOSFETs
Series:	STB18NM80
Factory Pack Quantity:	1000
Subcategory:	Transistors
Unit Weight:	4 g

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Datasheet

STB18NM80 Datasheet (PDF)

PCN

TARIC:: 8541210000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412101
ECCN:: EAR99

MDMesh™ N-Channel Power MOSFETs

STMicroelectronics' MDMesh™ N-Channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market. Key features include low input capacitance and gate charge, low gate input resistance, and best R_DS(on)*Q_g in the industry.