STB18N60DM2

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Mouser No:

511-STB18N60DM2

Mfr. No:

STB18N60DM2

Mfr.:

STMicroelectronics

Description:

MOSFETs N-channel 600 V, 0.260 Ohm typ., 12 A MDmesh DM2 Power MOSFET in a D2PAK package

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Lifecycle:

End of Life:

Scheduled for obsolescence and will be discontinued by the manufacturer.

Datasheet:

STB18N60DM2 Datasheet (PDF)

ECAD Model:

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Delivery Restriction:

Mouser does not presently sell this product in your region.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
Delivery Restriction:	Mouser does not presently sell this product in your region.
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	D2PAK-3 (TO-263-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	12 A
Rds On - Drain-Source Resistance:	260 mOhms
Vgs - Gate-Source Voltage:	25 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	20 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	90 W
Channel Mode:	Enhancement
Tradename:	MDmesh
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	STMicroelectronics
Configuration:	Single
Fall Time:	32.5 ns
Product Type:	MOSFETs
Rise Time:	8 ns
Series:	STB18N60DM2
Factory Pack Quantity:	1000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	9.5 ns
Typical Turn-On Delay Time:	13.5 ns
Unit Weight:	4 g

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Filter Document:

Datasheet

STB18N60DM2 Datasheet (PDF)

EOL

Product Discontinuation Notification 2026-3-17 (PDF)

PCN

Compliance Codes

TARIC:: 8541100000
CNHTS:: 8541290000
CAHTS:: 8541100090
USHTS:: 8541290065
KRHTS:: 8541109000
MXHTS:: 8541100101
ECCN:: EAR99

Origin Classifications

Country of Origin:: Singapore
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

MDmesh™ DM2 Power MOSFETs

STMicroelectronics MDmesh™ DM2 Power MOSFETs are silicon-based MOSFETs with a fast recovery intrinsic diode optimized for ZVS phase-shift bridge topologies. STMicroelectronics MDmesh DM2 MOSFETS feature a very low recovery charge and time (Q_rr, t_rr) and shows 20% lower R_DS(on) compared to the previous generation. High dV/dt ruggedness (40V/ns) ensures improved system reliability.