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STAC4932B

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See Product Specifications

Mouser No:

511-STAC4932B

Mfr. No:

STAC4932B

Mfr.:

STMicroelectronics

Description:

RF MOSFET Transistors RF PWR 1000w/m 26dB N-Ch 123 MHz VHF/UHF

Complete Your Design

Lifecycle:

Obsolete

Datasheet:

STAC4932B Datasheet (PDF)

ECAD Model:

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	RF MOSFET Transistors
Delivery Restrictions:	Mouser does not presently sell this product in your region.
RoHS:
Transistor Polarity:	N-Channel
Technology:	Si
Id - Continuous Drain Current:	1 mA
Vds - Drain-Source Breakdown Voltage:	200 V
Operating Frequency:	250 MHz
Gain:	26 dB
Output Power:	1.2 kW
Minimum Operating Temperature:	- 65 C
Maximum Operating Temperature:	+ 150 C
Mounting Style:	SMD/SMT
Package/Case:	STAC244B
Packaging:	Tray
Brand:	STMicroelectronics
Forward Transconductance - Min:	6 S
Product Type:	RF MOSFET Transistors
Series:	STAC4932B
Factory Pack Quantity:	80
Subcategory:	MOSFETs
Type:	RF Power MOSFET
Vgs - Gate-Source Voltage:	+ 20 V
Unit Weight:	2,100 g

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Datasheet

STAC4932B Datasheet (PDF)

PCN

Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

STAC4932B RF Power Transistors

STMicroelectronics STAC4932B RF power transistors are designed for use in 100 V pulse applications up to 250 MHz. STMicroelectronics STAC4932B RF power transistors feature excellent thermal stability and common source push-pull configuration. These STMicroelectronics N-channel field-effect RF power transistors benefit from highly efficient STAC® (ST Air Cavity) packaging technology.
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