SGT350R70GTK

STMicroelectronics
511-SGT350R70GTK
SGT350R70GTK

Mfr.:

Description:
GaN FETs 700 V, 270 mOhm typ., 6 A, e-mode PowerGaN transistor
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Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
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In Stock: 711

Stock:
711 Can Dispatch Immediately
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
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Packaging:
Full Reel (Order in multiples of 2500)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
2,24 € 2,24 €
1,44 € 14,40 €
1,03 € 103,00 €
0,869 € 434,50 €
0,82 € 820,00 €
Full Reel (Order in multiples of 2500)
0,702 € 1.755,00 €
0,697 € 3.485,00 €
0,68 € 6.800,00 €
† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: GaN FETs
RoHS:  
SMD/SMT
DPAK-3
700 V
6 A
350 mOhms
- 1.4 V, + 7 V
2.5 V
1.5 nC
- 55 C
+ 150 C
47 W
Enhancement
Brand: STMicroelectronics
Configuration: Single
Fall Time: 6.1 ns
Moisture Sensitive: Yes
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Product: FET
Product Type: GaN FETs
Rise Time: 3.5 ns
Series: SGT
Factory Pack Quantity: 2500
Subcategory: Transistors
Technology: GaN
Type: PowerGaN Transistor
Typical Turn-Off Delay Time: 1.2 ns
Typical Turn-On Delay Time: 0.9 ns
Unit Weight: 300 mg
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Attributes selected: 0

Datasheet

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TARIC:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

SGT350R70GTK E-Mode PowerGaN Transistor

STMicroelectronics SGT350R70GTK E-Mode PowerGaN Transistor is a high-performance enhancement-mode PowerGaN transistor optimized for efficient power conversion in demanding applications. With a drain-source voltage rating of 700V and a maximum on-resistance of 350mΩ, the STMicroelectronics SGT350R70GTK delivers low conduction losses and fast switching capabilities thanks to Gallium Nitride (GaN) technology. Packaged in a thermally enhanced DPAK format, the device supports high current handling and improved heat dissipation, suitable for high-density power designs. A low gate charge and output capacitance enable high-frequency operation, ideal for use in power factor correction (PFC), resonant converters, and other advanced power topologies in industrial, telecom, and consumer electronics sectors.

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