SGT120R65AL

STMicroelectronics
511-SGT120R65AL
SGT120R65AL

Mfr.:

Description:
GaN FETs 650 V, 75 mOhm typ., 15 A, e-mode PowerGaN transistor

Lifecycle:
Obsolete
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Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: GaN FETs
Delivery Restrictions:
 Mouser does not presently sell this product in your region.
RoHS:  
SMD/SMT
PowerFLAT-8
N-Channel
1 Channel
650 V
15 A
120 mOhms
- 10 V, + 6 V
2.6 V
3 nC
- 55 C
+ 155 C
192 W
Enhancement
Brand: STMicroelectronics
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: CN
Fall Time: 9.7 ns
Moisture Sensitive: Yes
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Product Type: GaN FETs
Rise Time: 6 ns
Factory Pack Quantity: 3000
Subcategory: Transistors
Technology: GaN
Transistor Type: E-Mode
Typical Turn-Off Delay Time: 8.9 ns
Typical Turn-On Delay Time: 4.1 ns
Unit Weight: 76 mg
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TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
MXHTS:
8541299900
ECCN:
EAR99

SGT120R65AL 650V E-Mode PowerGaN Transistor

STMicroelectronics SGT120R65AL 650V E-Mode PowerGaN Transistor offers 15A maximum current capability combined with well-established packaging technology and a Kelvin source connection for optimum gate driving. The resulting G-HEMT device provides extremely low conduction losses, high current capability, and ultra-fast switching operation to enable high power density and unbeatable efficiency. The SGT120R65AL is available n an industry-standard PowerFLAT 5×6 HV compact surface-mount package. Typical applications include PC adaptors, USB wall chargers, and wireless charging.