SCTWA40N12G24AG

STMicroelectronics
511-SCTWA40N12G24AG
SCTWA40N12G24AG

Mfr.:

Description:
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an HiP247-4 package

Lifecycle:
End of Life:
Scheduled for obsolescence and will be discontinued by the manufacturer.
ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

In Stock: 90

Stock:
90 Can Dispatch Immediately
Factory Lead Time:
22 Weeks Estimated factory production time for quantities greater than shown.
Quantities greater than 90 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
16,16 € 16,16 €
11,49 € 114,90 €
9,40 € 940,00 €

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: SiC MOSFETs
RoHS:  
Through Hole
HiP247-4
N-Channel
1 Channel
1.2 kV
33 A
105 mOhms
- 18 V, + 18 V
5 V
63 nC
- 55 C
+ 200 C
290 W
Enhancement
AEC-Q101
Brand: STMicroelectronics
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: CN
Fall Time: 13 ns
Packaging: Tube
Product: SiC MOSFETS
Product Type: SiC MOSFETS
Rise Time: 5 ns
Factory Pack Quantity: 600
Subcategory: Transistors
Technology: SiC
Typical Turn-Off Delay Time: 18 ns
Typical Turn-On Delay Time: 11 ns
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

This functionality requires JavaScript to be enabled.

TARIC:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99