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SCTWA30N120

Name: STMicroelectronics SCTWA30N120
Brand: STMicroelectronics
SKU: 511-SCTWA30N120
Price: 11.97 EUR
Availability: InStock

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Mouser No:

511-SCTWA30N120

Mfr. No:

SCTWA30N120

Mfr.:

STMicroelectronics

Description:

SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 80 mOhm typ., 45 A in an HiP247 long leads

Complete Your Design

Lifecycle:

End of Life:

Scheduled for obsolescence and will be discontinued by the manufacturer.

Datasheet:

SCTWA30N120 Datasheet (PDF)

ECAD Model:

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In Stock: 557

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Pricing (EUR)

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	11,97 €	11,97 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	Through Hole
Package/Case:	HiP-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	45 A
Rds On - Drain-Source Resistance:	100 mOhms
Vgs - Gate-Source Voltage:	- 10 V, + 25 V
Vgs th - Gate-Source Threshold Voltage:	3.5 V
Qg - Gate Charge:	105 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 200 C
Pd - Power Dissipation:	270 W
Channel Mode:	Enhancement
Brand:	STMicroelectronics
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Packaging:	Tube
Product Type:	SiC MOSFETS
Series:	SCTWA30N120
Factory Pack Quantity:	600
Subcategory:	Transistors
Technology:	SiC
Unit Weight:	6,100 g

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Filter Document:

Datasheet

SCTWA30N120 Datasheet (PDF)

EOL

Product Discontinuation Notification 2025-8-8 (PDF)

PCN

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

Silicon Carbide Power MOSFETs

STMicroelectronics Silicon Carbide Power MOSFETs bring wide bandgap materials' advanced efficiency and reliability to a broader range of energy-conscious applications. These applications include inverters for electric/hybrid vehicles, solar or wind power generation, high-efficiency drives, power supplies, and smart-grid equipment. An extended voltage range from 650V to 1700V features excellent switching performance combined with very low on-state resistance R_DS(on) per area Figure Of Merit. ST SiC MOSFETs allow the design of more efficient and compact systems. The STMicro 1200V SiC MOSFETs exhibit an outstanding temperature rating of 200°C for improved thermal design of power electronics systems. Compared to silicon MOSFET, SiC MOSFET also features significantly reduced switching losses with minimal variation versus the temperature.