SCTW60N120G2

STMicroelectronics
511-SCTW60N120G2
SCTW60N120G2

Mfr.:

Description:
SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 35 mOhm typ., 60 A in an HiP247 package
Complete Your Design

Lifecycle:
Obsolete
Datasheet:
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Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: SiC MOSFETs
Delivery Restrictions:
 Mouser does not presently sell this product in your region.
RoHS:  
Through Hole
HiP247-3
N-Channel
1 Channel
1.2 kV
60 A
52 mOhms
5 V
94 nC
- 55 C
+ 200 C
389 W
Enhancement
Brand: STMicroelectronics
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: IT
Fall Time: 14 ns
Packaging: Tube
Product: SiC MOSFETS
Product Type: SiC MOSFETS
Rise Time: 16 ns
Factory Pack Quantity: 600
Subcategory: Transistors
Technology: SiC
Typical Turn-Off Delay Time: 32 ns
Typical Turn-On Delay Time: 16 ns
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TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

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