SCTW35N65G2V

Name: STMicroelectronics SCTW35N65G2V
Brand: STMicroelectronics
SKU: 511-SCTW35N65G2V
Price: 12.63 EUR
Availability: InStock

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Mouser No:

511-SCTW35N65G2V

Mfr. No:

SCTW35N65G2V

Mfr.:

STMicroelectronics

Description:

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 45 A in an HiP247 package

Complete Your Design

Lifecycle:

End of Life:

Scheduled for obsolescence and will be discontinued by the manufacturer.

Datasheet:

SCTW35N65G2V Datasheet (PDF)

ECAD Model:

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In Stock: 534

Stock:: 534 Can Dispatch Immediately

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	12,63 €	12,63 €
	10,29 €	102,90 €
	8,57 €	857,00 €
	7,31 €	4.386,00 €
	7,14 €	8.568,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	Through Hole
Package/Case:	HiP-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	45 A
Rds On - Drain-Source Resistance:	67 mOhms
Vgs - Gate-Source Voltage:	- 10 V, + 22 V
Vgs th - Gate-Source Threshold Voltage:	5 V
Qg - Gate Charge:	73 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 200 C
Pd - Power Dissipation:	240 W
Channel Mode:	Enhancement
Brand:	STMicroelectronics
Packaging:	Tube
Product Type:	SiC MOSFETS
Factory Pack Quantity:	600
Subcategory:	Transistors
Technology:	SiC
Unit Weight:	8,006 g

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Filter Document:

Datasheet

SCTW35N65G2V Datasheet (PDF)

EOL

Product Discontinuation Notification 2025-8-8 (PDF)

PCN

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

SCTW35N65G2V

Mfr.: STMicroelectronics

Description: SiC MOSFETs Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 45 A in an HiP247 package Complete Your Design

In Stock: 534

Pricing (EUR)

Specifications

Documents (7)

Datasheet

EOL

PCN

Environmental Documents

Product Compliance

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Mfr.:

STMicroelectronics

Description:

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 45 A in an HiP247 package

Complete Your Design

FEATURED PRODUCTS

STMICROELECTRONICS