SCTHCT250N12G3AG

STMicroelectronics
511-SCTHCT250N12G3AG
SCTHCT250N12G3AG

Mfr.:

Description:
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 8.5 mOhm typ., 239 A
Complete Your Design

Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

Availability

Stock:
Non-Stocked
Factory Lead Time:
19 Weeks Estimated factory production time.
Minimum: 448   Multiples: 448
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
49,15 € 22.019,20 €

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: SiC MOSFETs
RoHS:  
Through Hole
N-Channel
1 Channel
1.2 kV
239 A
10.5 mOhms
-10 V, 22 V
4.4 V
304 nC
- 55 C
+ 200 C
994 W
Enhancement
Brand: STMicroelectronics
Configuration: Single
Packaging: Tray
Product: SiC MOSFETS
Product Type: SiC MOSFETS
Factory Pack Quantity: 448
Subcategory: Transistors
Technology: SiC
Transistor Type: 1 N-Channel
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

Datasheet

This functionality requires JavaScript to be enabled.

TARIC:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

An unexpected error has occurred.


Have a question? Please visit the Help Centre.
For questions about a specific order, please log in to your account.

If you encounter further problems, please contact us on 800-346-6873 or email help@mouser.com.