SCTHC250N120G3AG

STMicroelectronics
511-SCTHC250N120G3AG
SCTHC250N120G3AG

Mfr.:

Description:
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 8.5 mOhm typ., 239 A in a STPAK high creepage package
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Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
ECAD Model:
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Availability

Stock:
Non-Stocked
Factory Lead Time:
19 Weeks Estimated factory production time.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
64,86 € 64,86 €
52,42 € 524,20 €
49,15 € 4.915,00 €

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: SiC MOSFETs
Through Hole
STPAK-4
N-Channel
1 Channel
1.2 kV
239 A
10.5 nC
- 10 V, + 22 V
4.4 V
304 nC
- 55 C
+ 200 C
994 W
Brand: STMicroelectronics
Configuration: Single
Packaging: Tube
Product: MOSFET
Product Type: SiC MOSFETS
Factory Pack Quantity: 1
Subcategory: Transistors
Technology: SiC
Transistor Type: 1 N-Channel
Type: Power MOSFET
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Attributes selected: 0

Datasheet

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TARIC:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

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