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SCTH40N120G2V7AG

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See Product Specifications

Mouser No:

511-SCTH40N120G2V7AG

Mfr. No:

SCTH40N120G2V7AG

Mfr.:

STMicroelectronics

Description:

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm 33 A

Complete Your Design

Lifecycle:

Obsolete

Datasheet:

SCTH40N120G2V7AG Datasheet (PDF)

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	SiC MOSFETs
Delivery Restrictions:	Mouser does not presently sell this product in your region.
RoHS:
Mounting Style:	SMD/SMT
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	33 A
Rds On - Drain-Source Resistance:	105 mOhms
Vgs - Gate-Source Voltage:	- 10 V, + 22 V
Vgs th - Gate-Source Threshold Voltage:	5 V
Qg - Gate Charge:	63 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	250 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Brand:	STMicroelectronics
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Packaging:	Reel
Packaging:	Cut Tape
Product Type:	SiC MOSFETS
Factory Pack Quantity:	1000
Subcategory:	Transistors
Technology:	SiC
Unit Weight:	1,892 g

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Filter Document:

Datasheet

SCTH40N120G2V7AG Datasheet (PDF)

EOL

Product Discontinuation Notification 2025-8-8 (PDF)

PCN

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

SCTH40N120G2V7AG Silicon Carbide Power MOSFET

STMicroelectronics SCTH40N120G2V7AG Silicon Carbide (SiC) Power MOSFET is developed with advanced and innovative second-generation SiC MOSFET technology. This power MOSFET features remarkably low on-resistance per unit area and very good switching performance. The SiC power MOSFET includes high operating junction temperature capability, extremely low gate charge, and input capacitance. This silicon carbide MOSFET incorporates a very fast and robust intrinsic body diode and is AEC-Q101 qualified. The SCTH40N120G2V7AG MOSFET offers 1200V drain-source voltage, 105mΩ maximum static drain-source on-resistance, and 33A drain current. Typical applications include chargers, power supply for renewable energy systems, and high-frequency DC-DC converters.

Silicon Carbide Power MOSFETs

STMicroelectronics Silicon Carbide Power MOSFETs bring wide bandgap materials' advanced efficiency and reliability to a broader range of energy-conscious applications. These applications include inverters for electric/hybrid vehicles, solar or wind power generation, high-efficiency drives, power supplies, and smart-grid equipment. An extended voltage range from 650V to 1700V features excellent switching performance combined with very low on-state resistance R_DS(on) per area Figure Of Merit. ST SiC MOSFETs allow the design of more efficient and compact systems. The STMicro 1200V SiC MOSFETs exhibit an outstanding temperature rating of 200°C for improved thermal design of power electronics systems. Compared to silicon MOSFET, SiC MOSFET also features significantly reduced switching losses with minimal variation versus the temperature.