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SCT50N120

Name: STMicroelectronics SCT50N120
Brand: STMicroelectronics
SKU: 511-SCT50N120
Price: 24.68 EUR
Availability: InStock

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Mouser No:

511-SCT50N120

Mfr. No:

SCT50N120

Mfr.:

STMicroelectronics

Description:

SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 52 mOhm typ., 65 A in an HiP247 package

Complete Your Design

Lifecycle:

End of Life:

Scheduled for obsolescence and will be discontinued by the manufacturer.

Datasheet:

SCT50N120 Datasheet (PDF)

ECAD Model:

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In Stock: 329

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	24,68 €	24,68 €
	16,59 €	165,90 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	Through Hole
Package/Case:	HiP-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	65 A
Rds On - Drain-Source Resistance:	52 mOhms
Vgs - Gate-Source Voltage:	- 10 V, + 25 V
Vgs th - Gate-Source Threshold Voltage:	1.8 V
Qg - Gate Charge:	122 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 200 C
Pd - Power Dissipation:	318 W
Channel Mode:	Enhancement
Tradename:	HiP247
Brand:	STMicroelectronics
Configuration:	Single
Packaging:	Tube
Product Type:	SiC MOSFETS
Series:	SCT50N120
Factory Pack Quantity:	600
Subcategory:	Transistors
Technology:	SiC
Unit Weight:	4,500 g

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Filter Document:

Datasheet

SCT50N120 Datasheet (PDF)

EOL

Product Discontinuation Notification 2025-8-8 (PDF)

PCN

Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

Silicon Carbide Power MOSFETs

STMicroelectronics Silicon Carbide Power MOSFETs bring wide bandgap materials' advanced efficiency and reliability to a broader range of energy-conscious applications. These applications include inverters for electric/hybrid vehicles, solar or wind power generation, high-efficiency drives, power supplies, and smart-grid equipment. An extended voltage range from 650V to 1700V features excellent switching performance combined with very low on-state resistance R_DS(on) per area Figure Of Merit. ST SiC MOSFETs allow the design of more efficient and compact systems. The STMicro 1200V SiC MOSFETs exhibit an outstanding temperature rating of 200°C for improved thermal design of power electronics systems. Compared to silicon MOSFET, SiC MOSFET also features significantly reduced switching losses with minimal variation versus the temperature.