It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

SCT1000N170

Name: STMicroelectronics SCT1000N170
Brand: STMicroelectronics
SKU: 511-SCT1000N170
Price: 7.79 EUR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

511-SCT1000N170

Mfr. No:

SCT1000N170

Mfr.:

STMicroelectronics

Description:

SiC MOSFETs Silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package

Complete Your Design

Datasheet:

SCT1000N170 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about STMicroelectronics SCT1000N170

In Stock: 592

Stock:: 592 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 17 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	7,79 €	7,79 €
	5,58 €	55,80 €
	4,65 €	465,00 €
	4,15 €	2.490,00 €
	3,87 €	4.644,00 €

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	Through Hole
Package/Case:	HiP-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.7 kV
Id - Continuous Drain Current:	6 A
Rds On - Drain-Source Resistance:	1 Ohms
Vgs - Gate-Source Voltage:	- 10 V, + 25 V
Vgs th - Gate-Source Threshold Voltage:	2.1 V
Qg - Gate Charge:	14 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 200 C
Pd - Power Dissipation:	120 W
Channel Mode:	Enhancement
Brand:	STMicroelectronics
Configuration:	Single
Country of Assembly:	IT
Country of Diffusion:	Not Available
Country of Origin:	IT
Packaging:	Tube
Product Type:	SiC MOSFETS
Series:	SCT1000N170
Factory Pack Quantity:	600
Subcategory:	Transistors
Technology:	SiC
Transistor Type:	1 N-Channel

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

SCT1000N170 Datasheet (PDF)

PCN

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

Silicon Carbide Power MOSFETs

STMicroelectronics Silicon Carbide Power MOSFETs bring wide bandgap materials' advanced efficiency and reliability to a broader range of energy-conscious applications. These applications include inverters for electric/hybrid vehicles, solar or wind power generation, high-efficiency drives, power supplies, and smart-grid equipment. An extended voltage range from 650V to 1700V features excellent switching performance combined with very low on-state resistance R_DS(on) per area Figure Of Merit. ST SiC MOSFETs allow the design of more efficient and compact systems. The STMicro 1200V SiC MOSFETs exhibit an outstanding temperature rating of 200°C for improved thermal design of power electronics systems. Compared to silicon MOSFET, SiC MOSFET also features significantly reduced switching losses with minimal variation versus the temperature.