SCT070HU120G3AG

STMicroelectronics
511-SCT070HU120G3AG
SCT070HU120G3AG

Mfr.:

Description:
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HU3PAK package

ECAD Model:
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Availability

Stock:
0

You can still purchase this product for backorder.

On Order:
1.199
Expected 7/2/2026
Factory Lead Time:
22
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
12,15 € 12,15 €
8,80 € 88,00 €
7,28 € 728,00 €
Full Reel (Order in multiples of 600)
6,79 € 4.074,00 €

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: SiC MOSFETs
RoHS:  
SMD/SMT
HU3PAK-7
Single
SiC
- 55 C
+ 175 C
AEC-Q101
Reel
Cut Tape
Brand: STMicroelectronics
Channel Mode: Enhancement
Country of Assembly: JP
Country of Diffusion: Not Available
Country of Origin: JP
Fall Time: 9.9 ns
Id - Continuous Drain Current: 30 A
Number of Channels: 1 Channel
Pd - Power Dissipation: 223 W
Product Type: SiC MOSFETS
Qg - Gate Charge: 37 nC
Rds On - Drain-Source Resistance: 87 mOhms
Rise Time: 26.6 ns
Factory Pack Quantity: 600
Subcategory: Transistors
Transistor Polarity: N-Channel
Typical Turn-Off Delay Time: 17.6 ns
Typical Turn-On Delay Time: 18.7 ns
Vds - Drain-Source Breakdown Voltage: 1.2 kV
Vgs - Gate-Source Voltage: - 18 V, + 18 V
Vgs th - Gate-Source Threshold Voltage: 4.2 V
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TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99