SCT040W65G3-4

STMicroelectronics
511-SCT040W65G3-4
SCT040W65G3-4

Mfr.:

Description:
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
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Datasheet:
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In Stock: 537

Stock:
537 Can Dispatch Immediately
Factory Lead Time:
22 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
9,93 € 9,93 €
5,96 € 59,60 €
5,31 € 3.186,00 €
5,05 € 6.060,00 €

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: SiC MOSFETs
RoHS:  
Through Hole
HiP247-4
N-Channel
1 Channel
650 V
30 A
63 mOhms
- 10 V, + 22 V
3 V
37.5 nC
- 55 C
+ 200 C
240 W
Enhancement
Brand: STMicroelectronics
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: IT
Fall Time: 19 ns
Packaging: Tube
Product: SiC MOSFETS
Product Type: SiC MOSFETS
Rise Time: 7.4 ns
Factory Pack Quantity: 600
Subcategory: Transistors
Technology: SiC
Typical Turn-Off Delay Time: 29.6 ns
Typical Turn-On Delay Time: 13 ns
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Attributes selected: 0

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TARIC:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

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