SCT040W120G3-4AG

STMicroelectronics
511-SCT040W120G3-4AG
SCT040W120G3-4AG

Mfr.:

Description:
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A
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Datasheet:
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In Stock: 388

Stock:
388 Can Dispatch Immediately
Factory Lead Time:
22 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
11,31 € 11,31 €
7,90 € 79,00 €
6,47 € 647,00 €

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: SiC MOSFETs
RoHS:  
Through Hole
HiP-247-4
N-Channel
1 Channel
1.2 kV
40 A
54 mOhms
- 18 V, + 18 V
4.2 V
56 nC
- 55 C
+ 200 C
312 W
Enhancement
AEC-Q100
Brand: STMicroelectronics
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: CN
Fall Time: 22 ns
Packaging: Tube
Product Type: SiC MOSFETS
Rise Time: 6 ns
Factory Pack Quantity: 600
Subcategory: Transistors
Technology: SiC
Typical Turn-Off Delay Time: 34 ns
Typical Turn-On Delay Time: 12 ns
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Attributes selected: 0

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TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

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