SCT025W120G3-4AG

STMicroelectronics
511-SCT025W120G3-4AG
SCT025W120G3-4AG

Mfr.:

Description:
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
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Datasheet:
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In Stock: 495

Stock:
495
Can Dispatch Immediately
On Order:
1.200
Expected 8/31/2026
Factory Lead Time:
22
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
17,67 € 17,67 €
11,12 € 111,20 €
10,09 € 1.009,00 €
9,57 € 5.742,00 €

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: SiC MOSFETs
RoHS:  
Through Hole
HiP-247-4
N-Channel
1 Channel
1.2 kV
56 A
37 mOhms
- 18 V, + 18 V
4.2 V
73 nC
- 55 C
+ 200 C
388 W
Enhancement
AEC-Q101
Brand: STMicroelectronics
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: CN
Fall Time: 18 ns
Packaging: Tube
Product Type: SiC MOSFETS
Rise Time: 5.7 ns
Factory Pack Quantity: 600
Subcategory: Transistors
Technology: SiC
Typical Turn-Off Delay Time: 32.5 ns
Typical Turn-On Delay Time: 16.4 ns
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Attributes selected: 0

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TARIC:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

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