SCT025W120G3-4

STMicroelectronics
511-SCT025W120G3-4
SCT025W120G3-4

Mfr.:

Description:
SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
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Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
ECAD Model:
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Availability

Stock:
Non-Stocked
Factory Lead Time:
17 Weeks Estimated factory production time.
Minimum: 600   Multiples: 600
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
9,67 € 5.802,00 €
9,64 € 11.568,00 €
3.000 Quote

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: SiC MOSFETs
RoHS:  
Through Hole
HiP247-4
N-Channel
1 Channel
1.2 kV
56 A
37 mOhms
-10 V, 22 V
4.2 V
73 nC
- 55 C
+ 200 C
388 W
Enhancement
Brand: STMicroelectronics
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: CN
Fall Time: 18 ns
Packaging: Tube
Product: SiC MOSFETS
Product Type: SiC MOSFETS
Rise Time: 5.7 ns
Factory Pack Quantity: 600
Subcategory: Transistors
Technology: SiC
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 32.5 ns
Typical Turn-On Delay Time: 16.4 ns
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Attributes selected: 0

Datasheet

PCN

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TARIC:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

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