SCT020W120G3-4AG

STMicroelectronics
511-SCT020W120G3-4AG
SCT020W120G3-4AG

Mfr.:

Description:
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package
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Datasheet:
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In Stock: 362

Stock:
362 Can Dispatch Immediately
Factory Lead Time:
22 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
17,40 € 17,40 €
10,88 € 108,80 €
9,45 € 945,00 €
9,40 € 5.640,00 €

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: SiC MOSFETs
RoHS:  
Through Hole
Hip247-4
N-Channel
1 Channel
1.2 kV
100 A
28 mOhms
- 10 V, + 22 V
3 V
121 nC
- 55 C
+ 200 C
541 W
Enhancement
AEC-Q101
Brand: STMicroelectronics
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: CN
Fall Time: 22 ns
Packaging: Tube
Product: SiC MOSFETS
Product Type: SiC MOSFETS
Rise Time: 9 ns
Factory Pack Quantity: 600
Subcategory: Transistors
Technology: SiC
Typical Turn-Off Delay Time: 47 ns
Typical Turn-On Delay Time: 21 ns
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Attributes selected: 0

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TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

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