SCT019W120G3-4AG

STMicroelectronics
511-SCT019W120G3-4AG
SCT019W120G3-4AG

Mfr.:

Description:
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A in a HiP247-4 package
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Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
ECAD Model:
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Availability

Stock:
Non-Stocked
Factory Lead Time:
17 Weeks Estimated factory production time.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
15,96 € 15,96 €
12,78 € 127,80 €
11,05 € 1.105,00 €
11,03 € 6.618,00 €
1.200 Quote

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: SiC MOSFETs
Through Hole
HiP247-4
N-Channel
1 Channel
1.2 kV
90 A
26 mOhms
- 10 V, + 22 V
4.2 V
120 nC
- 55 C
+ 200 C
486 W
AEC-Q100
Brand: STMicroelectronics
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: Not Available
Fall Time: 17.1 ns
Packaging: Tube
Product: MOSFET
Product Type: SiC MOSFETS
Rise Time: 7.4 ns
Factory Pack Quantity: 600
Subcategory: Transistors
Technology: SiC
Transistor Type: 1 N-Channel
Type: Power MOSFET
Typical Turn-On Delay Time: 17.8 ns
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Attributes selected: 0

Datasheet

PCN

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TARIC:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

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