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SCT019HU120G3AG

Name: STMicroelectronics SCT019HU120G3AG
Brand: STMicroelectronics
SKU: 511-SCT019HU120G3AG
Price: 17.26 EUR
Availability: InStock

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Mouser No:

511-SCT019HU120G3AG

Mfr. No:

SCT019HU120G3AG

Mfr.:

STMicroelectronics

Description:

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A

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Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

SCT019HU120G3AG Datasheet (PDF)

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In Stock: 252

Stock:: 252

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On Order:: 600
Factory Lead Time:: 18

Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	17,26 €	17,26 €
	14,20 €	142,00 €
	12,28 €	1.228,00 €
Full Reel (Order in multiples of 600)
	12,28 €	7.368,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	SiC MOSFETs
RoHS:
Brand:	STMicroelectronics
Packaging:	Reel
Packaging:	Cut Tape
Product Type:	SiC MOSFETS
Factory Pack Quantity:	600
Subcategory:	Transistors

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Datasheet

SCT019HU120G3AG Datasheet (PDF)

PCN

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TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

Silicon Carbide Power MOSFETs

STMicroelectronics Silicon Carbide Power MOSFETs bring wide bandgap materials' advanced efficiency and reliability to a broader range of energy-conscious applications. These applications include inverters for electric/hybrid vehicles, solar or wind power generation, high-efficiency drives, power supplies, and smart-grid equipment. An extended voltage range from 650V to 1700V features excellent switching performance combined with very low on-state resistance R_DS(on) per area Figure Of Merit. ST SiC MOSFETs allow the design of more efficient and compact systems. The STMicro 1200V SiC MOSFETs exhibit an outstanding temperature rating of 200°C for improved thermal design of power electronics systems. Compared to silicon MOSFET, SiC MOSFET also features significantly reduced switching losses with minimal variation versus the temperature.