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SCT018W65G3-4AG

Name: STMicroelectronics SCT018W65G3-4AG
Brand: STMicroelectronics
SKU: 511-SCT018W65G3-4AG
Price: 15.91 EUR
Availability: InStock

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Mouser No:

511-SCT018W65G3-4AG

Mfr. No:

SCT018W65G3-4AG

Mfr.:

STMicroelectronics

Description:

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package

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Datasheet:

SCT018W65G3-4AG Datasheet (PDF)

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In Stock: 505

Stock:: 505 Can Dispatch Immediately

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Factory Lead Time:: 22 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	15,91 €	15,91 €
	12,18 €	121,80 €
	9,31 €	931,00 €
	8,49 €	5.094,00 €
	7,36 €	8.832,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	Through Hole
Package/Case:	HiP-247-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	55 A
Rds On - Drain-Source Resistance:	27 mOhms
Vgs - Gate-Source Voltage:	- 18 V, + 18 V
Vgs th - Gate-Source Threshold Voltage:	4.2 V
Qg - Gate Charge:	77 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 200 C
Pd - Power Dissipation:	398 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Brand:	STMicroelectronics
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	29 ns
Packaging:	Tube
Product Type:	SiC MOSFETS
Rise Time:	13 ns
Factory Pack Quantity:	600
Subcategory:	Transistors
Technology:	SiC
Typical Turn-Off Delay Time:	64 ns
Typical Turn-On Delay Time:	24.5 ns

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Datasheet

SCT018W65G3-4AG Datasheet (PDF)

PCN

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TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

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