SCT018H65G3-7

STMicroelectronics
511-SCT018H65G3-7
SCT018H65G3-7

Mfr.:

Description:
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
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Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
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Availability

Stock:
Non-Stocked
Factory Lead Time:
21 Weeks Estimated factory production time.
Minimum: 1000   Multiples: 1000
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
Full Reel (Order in multiples of 1000)
7,50 € 7.500,00 €

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: SiC MOSFETs
RoHS:  
SMD/SMT
H2PAK-7
N-Channel
1 Channel
650 V
55 A
27 mOhms
-10 V, 22 V
4.2 V
79.4 nC
- 55 C
+ 175 C
385 W
Enhancement
Brand: STMicroelectronics
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: CN
Fall Time: 25 ns
Packaging: Reel
Product: SiC MOSFETS
Product Type: SiC MOSFETS
Rise Time: 28 ns
Factory Pack Quantity: 1000
Subcategory: Transistors
Technology: SiC
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 56 ns
Typical Turn-On Delay Time: 25 ns
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Attributes selected: 0

Datasheet

PCN

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TARIC:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

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