RF5L15120CB4

STMicroelectronics
511-RF5L15120CB4
RF5L15120CB4

Mfr.:

Description:
RF MOSFET Transistors 120 W 50 V RF power LDMOS transistor from HF to 1.5 GHz

Lifecycle:
NRND:
Not recommended for new designs.
ECAD Model:
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In Stock: 18

Stock:
18 Can Dispatch Immediately
Factory Lead Time:
52 Weeks Estimated factory production time for quantities greater than shown.
Quantities greater than 18 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 100)
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
168,96 € 168,96 €
133,80 € 1.338,00 €
Full Reel (Order in multiples of 100)
133,80 € 13.380,00 €
† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: RF MOSFET Transistors
RoHS:  
Dual N-Channel
Si
2.5 A
95 V
1 Ohms
1 GHz
20 dB
120 W
+ 200 C
SMD/SMT
LBB-5
Reel
Cut Tape
MouseReel
Brand: STMicroelectronics
Moisture Sensitive: Yes
Number of Channels: 2 Channel
Product Type: RF MOSFET Transistors
Factory Pack Quantity: 100
Subcategory: MOSFETs
Type: RF Power MOSFET
Vgs - Gate-Source Voltage: - 8 V, + 10 V
Vgs th - Gate-Source Threshold Voltage: 2.8 V
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Compliance Codes
TARIC:
8541290000
CAHTS:
8541290000
USHTS:
8541290055
KRHTS:
8541299000
MXHTS:
8541299900
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

RF5L15120CB4 RF Power LDMOS Transistor

STMicroelectronics RF5L15120CB4 RF Power LDMOS Transistor features high efficiency and linear gain operations. The RF5L15120CB4 120W LDMOS FET provides a significant positive and negative gate/source voltage range. The device can be used in class AB/B and class C for all typical modulation formats.