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MMBT3904LT1G

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Mfr. No:

MMBT3904LT1G

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STMicroelectronics

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	Bipolar Transistors - BJT
Technology:	Si
Transistor Polarity:	NPN
Configuration:	Single
Maximum DC Collector Current:	200 mA
Collector- Emitter Voltage VCEO Max:	40 V
Collector- Base Voltage VCBO:	60 V
Emitter- Base Voltage VEBO:	6 V
Pd - Power Dissipation:	300 mW
Gain Bandwidth Product fT:	300 MHz
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Brand:	STMicroelectronics
DC Collector/Base Gain hFE Min:	40 at 100 uA, 1 V
Product Type:	BJTs - Bipolar Transistors
Subcategory:	Transistors

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