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TP65H150G4LSG

Name: Renesas Electronics TP65H150G4LSG
Brand: Renesas Electronics
SKU: 227-TP65H150G4LSG
Price: 4.35 EUR
Availability: LimitedAvailability

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Mouser No:

227-TP65H150G4LSG

Mfr. No:

TP65H150G4LSG

Mfr.:

Renesas Electronics

Description:

GaN FETs GAN FET 650V 13A TO220

Lifecycle:

Restricted Availability:

This part number is not currently available from Mouser. Product may be in limited distribution or a factory special order.

Datasheet:

TP65H150G4LSG Datasheet (PDF)

ECAD Model:

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In Stock: 1.938

Stock:: 1.938 Can Dispatch Immediately

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Quantities greater than 1938 will be subject to minimum order requirements.

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Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	4,35 €	4,35 €
	3,83 €	38,30 €
	2,82 €	282,00 €
	2,50 €	1.250,00 €
	2,22 €	2.220,00 €
Full Reel (Order in multiples of 1500)
	2,02 €	3.030,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Renesas Electronics
Product Category:	GaN FETs
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	8x8 PQFN
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	13 A
Rds On - Drain-Source Resistance:	180 mOhms
Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	4.8 V
Qg - Gate Charge:	8 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	52 W
Channel Mode:	Enhancement
Tradename:	SuperGaN
Brand:	Renesas Electronics
Configuration:	Single
Fall Time:	8 ns
Moisture Sensitive:	Yes
Packaging:	Reel
Packaging:	Cut Tape
Product Type:	GaN FETs
Rise Time:	5.2 ns
Series:	Gen IV SuperGaN
Factory Pack Quantity:	1500
Subcategory:	Transistors
Technology:	GaN
Typical Turn-Off Delay Time:	48 ns
Typical Turn-On Delay Time:	37.8 ns

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Datasheet

TP65H150G4LSG Datasheet (PDF)

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

Gen IV SuperGaN® FETs

Renesas Electronics Gen IV SuperGaN^® FETs are normally off devices enabling AC-DC bridgeless totem-pole PFC designs. These FETs feature a high voltage GaN High Electron Mobility Transistor (HEMT) with a low voltage silicon MOSFET and offer superior reliability and performance. The Gen IV SuperGaN platform has advanced epi and patented design technologies that simplify manufacturability. This design technology improves efficiency over silicon with a low gate charge, output capacitance, crossover loss, and reverse recovery charge. Renesas Electronics Gen IV FETs are available in a variety of options for datacom, computing, lighting, automotive, and other applications.