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TP65H035G4WS

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See Product Specifications

Mouser No:

227-TP65H035G4WS

Mfr. No:

TP65H035G4WS

Mfr.:

Renesas Electronics

Description:

GaN FETs 650V, 35mOhm

Lifecycle:

Restricted Availability:

This part number is not currently available from Mouser. Product may be in limited distribution or a factory special order.

Datasheet:

TP65H035G4WS Datasheet (PDF)

ECAD Model:

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Renesas Electronics
Product Category:	GaN FETs
Delivery Restrictions:	Mouser does not presently sell this product in your region.
RoHS:
Mounting Style:	Through Hole
Package/Case:	TO-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	46.5 A
Rds On - Drain-Source Resistance:	41 mOhms
Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	4.8 V
Qg - Gate Charge:	22 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	156 W
Channel Mode:	Enhancement
Tradename:	SuperGaN
Brand:	Renesas Electronics
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	PH
Fall Time:	10 ns
Packaging:	Tube
Product Type:	GaN FETs
Rise Time:	10 ns
Series:	Gen IV SuperGaN
Factory Pack Quantity:	30
Subcategory:	Transistors
Technology:	GaN
Typical Turn-Off Delay Time:	94 ns
Typical Turn-On Delay Time:	60 ns
Unit Weight:	6 g

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Filter Document:

Datasheet

TP65H035G4WS Datasheet (PDF)

RoHS Certificate (PDF)

CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

650V GaN FETs in TO-247 Packages

Renesas Electronics 650V GaN FETs in TO-247 Packages combine state-of-the-art high-voltage GaN HEMT and low-voltage silicon MOSFET technologies. The devices offer superior reliability and performance with improved efficiency over silicon. Renesas Electronics FETs have a lower gate charge, lower crossover loss, and a smaller reverse recovery charge.

Gen IV SuperGaN® FETs

Renesas Electronics Gen IV SuperGaN^® FETs are normally off devices enabling AC-DC bridgeless totem-pole PFC designs. These FETs feature a high voltage GaN High Electron Mobility Transistor (HEMT) with a low voltage silicon MOSFET and offer superior reliability and performance. The Gen IV SuperGaN platform has advanced epi and patented design technologies that simplify manufacturability. This design technology improves efficiency over silicon with a low gate charge, output capacitance, crossover loss, and reverse recovery charge. Renesas Electronics Gen IV FETs are available in a variety of options for datacom, computing, lighting, automotive, and other applications.