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TP65H030G4PYS

Name: Renesas Electronics TP65H030G4PYS
Brand: Renesas Electronics
SKU: 227-TP65H030G4PYS
Price: 4.08 EUR
Availability: OutOfStock

Mouser No:

227-TP65H030G4PYS

Mfr. No:

TP65H030G4PYS

Mfr.:

Renesas Electronics

Description:

GaN FETs 650V, 30mohm GaN FET in TO247-4L

Lifecycle:

New Product:

New from this manufacturer.

ECAD Model:

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Availability

Stock:: Non-Stocked

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Factory Lead Time:: 16 Weeks Estimated factory production time.

Enter Quantity:

Minimum: 960 Multiples: 960

Unit Price:

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Ext. Price:

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Est. Tariff:

This Product Ships FREE

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	4,08 €	3.916,80 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Renesas Electronics
Product Category:	GaN FETs
RoHS:
Package/Case:	TO-247-4L
Vds - Drain-Source Breakdown Voltage:	650 V
Tradename:	SuperGaN
Brand:	Renesas Electronics
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Packaging:	Tube
Product:	GaN FETs
Product Type:	GaN FETs
Factory Pack Quantity:	960
Subcategory:	Transistors

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Gen IV SuperGaN® FETs

Renesas Electronics Gen IV SuperGaN^® FETs are normally off devices enabling AC-DC bridgeless totem-pole PFC designs. These FETs feature a high voltage GaN High Electron Mobility Transistor (HEMT) with a low voltage silicon MOSFET and offer superior reliability and performance. The Gen IV SuperGaN platform has advanced epi and patented design technologies that simplify manufacturability. This design technology improves efficiency over silicon with a low gate charge, output capacitance, crossover loss, and reverse recovery charge. Renesas Electronics Gen IV FETs are available in a variety of options for datacom, computing, lighting, automotive, and other applications.