RJP65T43DPM-00#T1

Renesas Electronics
968-RJP65T43DPM-00T1
RJP65T43DPM-00#T1

Mfr.:

Description:
IGBTs POWER TRS1

Lifecycle:
Restricted Availability:
This part number is not currently available from Mouser. Product may be in limited distribution or a factory special order.
Datasheet:
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In Stock: 4

Stock:
4 Can Dispatch Immediately
Quantities greater than 4 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
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Ext. Price:
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Pricing (EUR)

Qty. Unit Price
Ext. Price
13,50 € 13,50 €
10,29 € 102,90 €
8,57 € 1.028,40 €
7,63 € 3.891,30 €
7,17 € 7.313,40 €

Product Attribute Attribute Value Select Attribute
Renesas Electronics
Product Category: IGBTs
RoHS:  
Si
TO-3PFM
Through Hole
Single
650 V
1.8 V
- 20 V, 20 V
40 A
68.8 W
+ 175 C
Tube
Brand: Renesas Electronics
Continuous Collector Current Ic Max: 20 A
Gate-Emitter Leakage Current: 1 uA
Product Type: IGBT Transistors
Factory Pack Quantity: 30
Subcategory: IGBTs
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Attributes selected: 0

Datasheet

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Compliance Codes
TARIC:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99
Origin Classifications
Country of Origin:
Malaysia
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

RJP65T43DPM High Speed Switching IGBT

Renesas Electronics RJP65T43DPM High Speed Switching IGBT is a 650V, 20A IGBT with a 20kHz to 100kHz operating frequency range. This IGBT offers low collector-to-emitter saturation voltage and comes in a TO-3PFM package. The RJP65T43DPM IGBT features a 150A collector peak current, 68.8W collector dissipation, and 175°C junction temperature. This IGBT is stored in the -55°C to 150°C temperature range, and typical applications include Power Factor Correction (PFC).

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RENESAS ELECTRONICS

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