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5962-3829407MXA

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See Product Specifications

Mouser No:

972-5962-3829407MXA

Mfr. No:

5962-3829407MXA

Mfr.:

Renesas Electronics

Description:

SRAM 64K Asynchronous 8K x 8 SRAM

Lifecycle:

End of Life:

Scheduled for obsolescence and will be discontinued by the manufacturer.

Datasheet:

5962-3829407MXA Datasheet (PDF)

ECAD Model:

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Mouser does not presently sell this product in your region.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Renesas Electronics
Product Category:	SRAM
Delivery Restrictions:	Mouser does not presently sell this product in your region.
RoHS:	N
Memory Size:	64 kbit
Organisation:	8 k x 8
Access Time:	70 ns
Interface Type:	Parallel
Supply Voltage - Max:	5.5 V
Supply Voltage - Min:	4.5 V
Supply Current - Max:	100 mA
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 125 C
Mounting Style:	Through Hole
Package/Case:	CDIP-28
Packaging:	Tube
Brand:	Renesas Electronics
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	TH
Memory Type:	SDR
Product Type:	SRAM
Series:	5962-38294
Factory Pack Quantity:	13
Subcategory:	Memory & Data Storage
Type:	Asynchronous

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Filter Document:

Datasheet

5962-3829407MXA Datasheet (PDF)

EOL

Product Discontinuation Notification 2025-5-30 (PDF)

PCN

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TARIC:: 8542324500
CNHTS:: 8542319000
CAHTS:: 8542320030
USHTS:: 8542320041
JPHTS:: 854232019
KRHTS:: 8542321020
MXHTS:: 8542320299
ECCN:: 3A001.a.2.c

EEPROMs

Renesas Electronics EEPROMs achieve high speed, low power consumption, and high reliability. The Renesas EEPROMs employ advanced MONOS memory technology, CMOS process, and low voltage circuitry technology. The MONOS structure has the advantage of storing the charge in a cell. The charge is less likely to be lost compared to another structure, such as FLOTOX. This technology leads to a longer data retention life.