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SCT4065DWATL

Name: ROHM Semiconductor SCT4065DWATL
Brand: ROHM Semiconductor
SKU: 755-SCT4065DWATL
Price: 7.35 EUR
Availability: OutOfStock

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See Product Specifications

Mouser No:

755-SCT4065DWATL

Mfr. No:

SCT4065DWATL

Mfr.:

ROHM Semiconductor

Description:

SiC MOSFETs 750V, 45m, 4-pin THD, Trench-structure, Silicon-carbide(SiC) power MOSFET

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

SCT4065DWATL Datasheet

ECAD Model:

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More Information

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Availability

Stock:: 0

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On Order:: 1.000

Expected 5/14/2026
Factory Lead Time:: 27

Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 1000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	7,35 €	7,35 €
	5,18 €	51,80 €
	4,21 €	421,00 €
	3,94 €	1.970,00 €
Full Reel (Order in multiples of 1000)
	3,68 €	3.680,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	SiC MOSFETs
Mounting Style:	SMD/SMT
Package/Case:	TO-263-7LA
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	750 V
Id - Continuous Drain Current:	22 A
Rds On - Drain-Source Resistance:	85 mOhms
Vgs - Gate-Source Voltage:	- 4 V, + 21 V
Vgs th - Gate-Source Threshold Voltage:	4.8 V
Qg - Gate Charge:	48 nC
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	71 W
Channel Mode:	Enhancement
Brand:	ROHM Semiconductor
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	Not Available
Fall Time:	11 ns
Forward Transconductance - Min:	5.7 ns
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Product:	Power MOSFETs
Product Type:	SiC MOSFETS
Rise Time:	14 ns
Factory Pack Quantity:	1000
Subcategory:	Transistors
Technology:	SiC
Transistor Type:	1 N-Channel
Type:	SiC Power MOSFET
Typical Turn-Off Delay Time:	25 ns
Typical Turn-On Delay Time:	5.2 ns

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Datasheet

SCT4065DWATL Datasheet

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USHTS:: 8541100080
ECCN:: EAR99

750V N-Channel SiC MOSFETs

ROHM Semiconductor 750V N-Channel SiC MOSFETs can boost switching frequency, thereby decreasing the volume of capacitors, reactors, and other components required. These SiC MOSFETs are available in TO-247N, TOLL, TO-263-7L, TO-263-7LA, and TO-247-4L packages. The devices have static drain-source on-state resistance [R_DS(on)] (typ.) rating from 13mΩ to 65mΩ and continuous drain (I_D) and source current (I_S) (T_C=25°C) of 22A to 120A. These ROHM Semiconductor 750V SiC MOSFETs offer high withstand voltages, low on-resistance, and high-speed switching characteristics, leveraging the unique attributes of SiC technology.