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SCT4045DWATL

Name: ROHM Semiconductor SCT4045DWATL
Brand: ROHM Semiconductor
SKU: 755-SCT4045DWATL
Price: 9.56 EUR
Availability: InStock

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Mouser No:

755-SCT4045DWATL

Mfr. No:

SCT4045DWATL

Mfr.:

ROHM Semiconductor

Description:

SiC MOSFETs Transistor SiC MOSFET 750V 45m 4th Gen TO-263-7LA

Datasheet:

SCT4045DWATL Datasheet

ECAD Model:

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In Stock: 14

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Factory Lead Time:: 27 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Unit Price:

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Packaging:

Full Reel (Order in multiples of 1000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	9,56 €	9,56 €
	7,50 €	75,00 €
	5,70 €	570,00 €
	5,63 €	2.815,00 €
Full Reel (Order in multiples of 1000)
	5,20 €	5.200,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	TO-263-7
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	750 V
Id - Continuous Drain Current:	31 A
Rds On - Drain-Source Resistance:	45 mOhms
Vgs - Gate-Source Voltage:	- 4 V, + 21 V
Vgs th - Gate-Source Threshold Voltage:	4.8 V
Qg - Gate Charge:	63 nC
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	93 W
Channel Mode:	Enhancement
Brand:	ROHM Semiconductor
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	TH
Fall Time:	10 ns
Forward Transconductance - Min:	9.3 S
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Product:	SiC MOSFETS
Product Type:	SiC MOSFETS
Rise Time:	16 ns
Factory Pack Quantity:	1000
Subcategory:	Transistors
Technology:	SiC
Transistor Type:	1 N-Channel
Type:	Power MOSFET
Typical Turn-Off Delay Time:	27 ns
Typical Turn-On Delay Time:	5.1 ns

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Datasheet

SCT4045DWATL Datasheet

Specification Sheets

Datasheet - Chinese (English language)

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TARIC:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

750V N-Channel SiC MOSFETs

ROHM Semiconductor 750V N-Channel SiC MOSFETs can boost switching frequency, thereby decreasing the volume of capacitors, reactors, and other components required. These SiC MOSFETs are available in TO-247N, TOLL, TO-263-7L, TO-263-7LA, and TO-247-4L packages. The devices have static drain-source on-state resistance [R_DS(on)] (typ.) rating from 13mΩ to 65mΩ and continuous drain (I_D) and source current (I_S) (T_C=25°C) of 22A to 120A. These ROHM Semiconductor 750V SiC MOSFETs offer high withstand voltages, low on-resistance, and high-speed switching characteristics, leveraging the unique attributes of SiC technology.