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RS1E320GNTB

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See Product Specifications

Mouser No:

755-RS1E320GNTB

Mfr. No:

RS1E320GNTB

Mfr.:

ROHM Semiconductor

Lifecycle:

NRND:

Not recommended for new designs.

Datasheet:

ECAD Model:

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Mfr.:

ROHM Semiconductor

Mfr. No:

RS1E321GNTB1

Description:

MOSFETs Transistor, MOSFET Nch, 30V(Vdss), 32.1A(Id), (4.5V Drive)

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	HSOP-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	32 A
Rds On - Drain-Source Resistance:	1.9 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	42.8 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	3 W
Packaging:	Reel
Brand:	ROHM Semiconductor
Configuration:	Single
Fall Time:	28.5 ns
Forward Transconductance - Min:	35 S
Product Type:	MOSFETs
Rise Time:	15.6 ns
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	74.6 ns
Typical Turn-On Delay Time:	21.8 ns
Part # Aliases:	RS1E320GN
Unit Weight:	771,020 mg