RGWSX2TS65DGC13

ROHM Semiconductor
755-RGWSX2TS65DGC13
RGWSX2TS65DGC13

Mfr.:

Description:
IGBTs TO247 650V 60A TRNCH

ECAD Model:
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In Stock: 2.387

Stock:
2.387 Can Dispatch Immediately
Factory Lead Time:
22 Weeks Estimated factory production time for quantities greater than shown.
Quantities greater than 2387 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
6,51 € 6,51 €
3,80 € 38,00 €
3,19 € 319,00 €
3,17 € 1.902,00 €

Product Attribute Attribute Value Select Attribute
ROHM Semiconductor
Product Category: IGBTs
RoHS:  
Si
TO-247GE-3
Through Hole
Single
650 V
2 V
30 V
104 A
288 W
- 40 C
+ 175 C
Tube
Brand: ROHM Semiconductor
Gate-Emitter Leakage Current: 200 nA
Product Type: IGBT Transistors
Factory Pack Quantity: 600
Subcategory: IGBTs
Part # Aliases: RGWSX2TS65D
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Compliance Codes
TARIC:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
MXHTS:
8541299900
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

Field Stop Trench IGBTs

ROHM Field Stop Trench IGBTs are energy-saving, high-efficiency IGBTs used in a wide range of high-voltage and high-current applications. These IGBTs feature a low collector and emitter saturation voltage, short-circuit that withstands time, and built-in very fast and soft recovery FRD. The field stop trench IGBTs are ideal for UPS, power conditioners, welder, and general inverters for industrial use.

RGW 650V Field Stop Trench IGBTs

ROHM Semiconductor RGW 650V Field Stop Trench IGBTs offer a low collector-emitter saturation voltage in a small package. The RGW IGBTs feature high-speed switching, low switching loss, and built-in very fast and soft recovery FRD. The ROHM RGW 650V Field Stop Trench IGBTs are ideal for solar inverter, UPS, welding, IH, and PFC applications.