RGTV80TS65DGC13

755-RGTV80TS65DGC13
RGTV80TS65DGC13

Mfr.:

Description:
IGBTs 2us Short-Circuit Tol 650V 40A FRD Built-in TO-247N Field Stop Trench IGBT

Lifecycle:
End of Life:
Scheduled for obsolescence and will be discontinued by the manufacturer.
Datasheet:
ECAD Model:
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In Stock: 600

Stock:
600 Can Dispatch Immediately
Quantities greater than 600 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
6,67 € 6,67 €
4,52 € 45,20 €
3,23 € 323,00 €
2,99 € 1.794,00 €

Possible Replacement

ROHM Semiconductor RGTV80TS65DGC11
ROHM Semiconductor
IGBTs 650V 40A Field Stop Trench IGBT
NRND: Not recommended for new designs.
Compare With Current Part

Product Attribute Attribute Value Select Attribute
ROHM Semiconductor
Product Category: IGBTs
RoHS:  
Si
TO-247GE-3
Through Hole
Single
650 V
1.9 V
30 V
78 A
234 W
- 40 C
+ 175 C
Tube
Brand: ROHM Semiconductor
Gate-Emitter Leakage Current: 200 nA
Product Type: IGBT Transistors
Factory Pack Quantity: 600
Subcategory: IGBTs
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Attributes selected: 0

Datasheet

EOL

Specification Sheets

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Compliance Codes
TARIC:
8541290000
USHTS:
8541290095
ECCN:
EAR99
Origin Classifications
Country of Origin:
Japan
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

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